Photo & Etching
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Etching 방식 : Wet Etching (lift off) with temperature control
이용 가능 Mask CD (Critical Dimension) : >1um
Mask Size : 5" 가능 ( Etching시 Mask는 공급해 주셔야 합니다.)
Exposing : Light source (g,i-line) with CD resolution ≥1um
Etching Material : Metal ,SiO2
장비 보기

  • Wet station
  • Pattern형성을 위한 습식식각장비로, 유기산 용액을 사용하여 Electrode Metal, Buffer Oxide층을 식각할 수 있다.
  • SC-1 Bath : SUS (Ultrasonic, 40kHz, 600W)
  • Q.D.R Bath : Quartz(N2 Bubble)
  • Q.D.R Bath : SUS (N2 Bubble), 2 set
  • H2SO4 Bath : Quartz(Quart'z Heater, 2kW)
  • H2PO4 Bath : Quartz BOE & HF Baths : PTFE

  • Mask Aligner
  • Resolution : down to 1um
  • Range of wavelengths : 250 -450nm
  • Microscope : 10 - 400X
  • Exposure modes : * proximity * soft contact * hard contact * vacuum contact
  • Program storage : 100 different programs
Dry Etching Thickness : 500Å ~ 2um
Dry Etching Plasma source : MICP
Gas : Cl2 ,BCl3, SF6, CF4, N2, O2, Ar, He
각 Solid별 Etch gas 종류
Solid Etch Gas Etch Product
Si , SiO2 , Si3N4 CF4 , SF6 , NF3 SiF4
Si Cl2 , CCl2F2 SiCl2 , SiCl4
Al BCl3 , CCl4 , SiCl4 , Cl2 AlCl3 , Al2Cl6
Organic Solids O2 CO , CO2 , H2O
O2 + CF4 CO , CO2 , HF
Refractory Metal (W,Ta,Mo) CF4 WF6...