| Material | Formula | Standard
Purities, % |
Theoretical
Density, g/㎤ |
Melting
Point, ℃ |
Fabrication Method* | Applications |
| Aluminum | Al | 99.999 99.99 |
2.70 | 660 | 1 | Conductive film in IC's. High reflectivity front surface mirrors and reflectors on glass. In oxidized form, interference filters. |
| Antimony | Sb | 99.999 99.5 |
6.62 | 630.5 | 1 & 2 | Semiconducting films. |
| Bismuth | Bi | 99.999 99.5 |
9.80 | 271.3 | 1 & 2 | Ferromagnetic and resistive thin films. |
| Boron | B | 99.5 90-92, 94-96 |
2.34 | 2030 | 2 | Semiconductor. Diffusion layer. |
| Cadmium | Cd | 99.999 99.5 |
8.65 | 320.9 | 1 & 2 | Dielectric thin film. For metallizing paper, etc. |
| Chromium | Cr | 99.95 99.8+ |
7.19 | 1875 | 1,2 & 3 | Excellent adhering film on numerous substrates. Deposit on glass for printed circuit base. Co-deposit with SiO for resistor films. |
| Cobalt | Co | 99.9 | 8.90 | 1495 | 1 & 2 | Ferromagnetic thin films. |
| Copper | Cu | 99.999 99.99 |
8.96 | 1083 | 1 | Junction films in integrated circuits. Contacts. |
| Germanium | Ge | 99.9999 99.999 |
5.32 | 937.4 | 1 | High index film in infrared filters. |
| Gold | Au | 99.999 99.99 |
19.30 | 1063 | 1 | Contacts. Highly reflecting films. |
| Graphite | C | 99.9 99.5 |
2.26 | 3727 | 2 | Lubricant film. Semiconductor applications. |
| Hafnium | Hf | 99.9 (excl. Zr) |
13.10 | 2222 | 1 | Dielectric. Interference layers. |
| Indium | In | 99.999 99.99 |
7.31 | 156.2 | 1 | Superconducting films. Transistor contacts, diodes. |
| Iron | Fe | 99.9 | 7.86 | 1536 | 1 & 2 | Magnetic and memory elements. Ferromagnetic thin films. |
| Lead | Pb | 99.999 | 11.40 | 327.4 | 1 | Semiconducting films. Cyrogenic applications. |
| Magnesium | Mg | 99.99 99.9 |
1.74 | 651 | 1 | Diffusion with bismuth on glass to form ferromagnetic films. |
| Manganese | Mh | 99.95 | 7.43 | 1245 | 2 | Contacts for semiconductors. Adherence film. |
| Molybdenum | Mb | 99.95 | 10.20 | 2610 | 2 | Contacts. Hard, smooth film. Multilayer circuits. |
| Nickel | Ni | 99.995,99.99, 99.97, 99.9 | 8.90 | 1453 | 1 & 2 | Ferromagnetic films. Memory elements. |
| Niobium | Nb | 99.9+ | 8.40 | 2468 | 1 | Anodic films for rectification. |
| Palladium | Pd | 99.95 99.9 |
12.00 | 1552 | 1 & 2 | Corrosion resistant contacts. |
| Platinum | Pt | 99.95 99.9 |
21.45 | 1769 | 1 | Corrosion resistant contacts. Co-deposit with Si. |
| Rare Earth | 99.9 (excl. Ta) |
varies | varies | 1 | Misc. applications. | |
| Rhenium | Re | 99.99 | 20.53 | 3180 | 2 | Contacts. |
| Ruthenium | Ru | 99.9 | 12.20 | 2500 | 2 | Corrosion resistant contacts. |
| Selenium | Se | 99.999 | 4.50 | 220 | 1 | Photoconductive and rectifier films. |
| Silicon | Si | 99.999 | 2.33 | 1410 | 1 | Mechanical and chemical resistant coating. Interference filter. |
| Silver | Ag | 99.99 | 10.50 | 960.8 | 1 | Reflective film. Conductive contact. Bonding layer. |
| Tantalum | Ta | 99.95 | 16.60 | 2996 | 1 | Thin film capacitor and resistors. |
| Tellurium | Te | 99.99,
99.95 99.5 |
6.25 | 452 | 2 | Blocking contact in thin film devices. |
| Tin | Sn | 99.999 | 7.30 | 231.9 | 1 | Cyrogenic switching devices. |
| Tungsten | W | 99.95 | 19.30 | 3410 | 2 | Contacts. Hard, adherent films. |
| Vanadium | V | 99.5-99.7 | 5.96 | 1900 | 1 & 2 | Co-evaporate with SiO for resistor films. |
| Zinc | Zn | 99.999 99.9 |
7.14 | 419.5 | 1 | Capacitor dielectric films. For metalizing paper, etc. | Zirconium | Zr | 99.9 (excl. Hf) |
6.49 | 1852 | 1 | Interference filter. On tungsten field emitters to alter emission characteristics. |
