| Material | Formula | Standard
Purities, % |
Theoretical
Density, g/㎤ |
Melting
Point, ℃ |
Fabrication Method | Applications |
| Aluminum oxide | Al2O3 | 99.99 | 3.99 | 2045 | Hot-pressed | Protection of aluminum mirrors. High temperature dielectric. |
| Antimony oxide | Sb2O3 | 99.9 | 5.20 | 655 | Hot-pressed | Dielectric interference filter for ultra-violet radiation; use with cryolite. |
| Barium titanate | BaTiO3 | 99.9 99.6 |
6.06 | 1612 | Hot-pressed | Thin-film capacitor. |
| Bismuth oxide | Bi2O3 | 99.9 | 8.9 | 820 | Hot-pressed | Beam splitter. |
| Bismuth titanate | Bi2Ti4O11 | 99.9 | 6.09 | 900 | Hot-pressed | Dielectric thin film. For metallizing paper, etc.Beam splitter. Base coating for gold films for heating elements on glass. |
| Bismuth titanate | Bi4Ti3O12 | 8.11 | ||||
| Cerium oxide | CeO2 | 99.9 | 7.30 | 1950 | Hot-pressed | High index film; multilayer; anti-reflection coating. |
| Chromium oxide | Cr2O3 | 99.8 | 5.21 | 2000 | Hot-pressed | Absorbent brown film with medium index. |
| Europium-doped yttrium vanadate | YVO3-xEu2O3 | 99.9 | varies | varies | Hot-pressed | Phosphorescent coating on special currency papers. |
| Gallium oxide | Ga2O3 | 99.999 | 5.88 | 1900 | Hot-pressed | Dielectric film. |
| Germanium oxide | GeO2 | 4.23 | 1115 | |||
| Hafnium
oxide (unstabilized) |
HfO2 | 99.95 | 9.68 | 2790 | Hot-pressed | Dielectric coating. Very hard, adherent film. |
| Hafnium
oxide (stabilized) |
HfO210-15 wt. % CaO |
99.0 | varies | varies | ||
| Hafnium
oxide (stabilized) |
HfO210-15 wt. % Y2O3 |
|||||
| Indium oxide | In2O3 | 99.999 99.99 |
7.18 | 2000 | Hot-pressed | Transparent conductive films in electro-optical displays of the liquid crystal, electro-luminescent and gas discharge types. |
| Indium
oxide- tin oxide |
xIn2O3
- ySnO2 |
varies | varies | |||
| Iron oxide | Fe2O3 | 99.99 99.9 |
5.25 | 1565 | Hot-pressed | Beam splitter and interference layers. Magnetic films. |
| Fe3O4 | 99.5 | 5.18 | 1594 | |||
| Lanthanum oxide | La2O3 | 99.99 | 6.6 | 2250 | Hot-pressed | Thin film capacitors. Possible uses in PLZT devices. (Very moisture sensitive.) |
| Lead titanate | PbTiO3 | 99.9 | 7.52 | - | Hot-pressed | Thin film capacitors. |
| Lead zirconate | PbZrO3 | 99.7 | 7.81 | - | ||
| Lithium niobate | LiNbO3 | 99.9 | 4.64 | 1253 | Hot-pressed | Piezoelectrics. |
| Lutetium
iron oxide (garnet) |
Lu3Fe5O12 | 99.9 | 7.15 | - | Hot-pressed | Bubble memory devices. |
| Magnesium oxide | MgO | 99.99 99.5 |
3.58 | 2802 | Hot-pressed | High tempature dielectric. |
| Molybdenum oxide | MoO3 | 99.99 | 4.69 | 795 | Hot-pressed | Luminescent coatings. |
| Niobium oxide | Nb2O5 | 99.95 | 4.47 | 1460 | Hot-pressed | Dielectric coating. Multilayers. |
| Rare earth garnets | Ln3M5O12 | 99.9 | varies | varies | Hot-pressed | Bubble memory devices. |
| Rare earth oxides | varies | 99.999,
99.99 99.9 |
varies | varies | Hot-pressed | Possible dielectric coatings. |
| Silicon dioxide | SiO2 | 99.995 99.97 |
2.21 | 1713 | Hot-pressed | Hard durable film with low index. Insulating layer. |
| Silicon monoxide | SiO | 99.99 99.9 |
2.13 | 1700 | Hot-pressed | Protective film for front surface aluminized mirrors. Low index layer for infrared filters. |
| Strontium titanate | SrTiO3 | 99.9 | 4.15 | 2040 | Hot-pressed | Thin film capacitors. |
| Strontium zirconate | SrZrO3 | 99.0 | 5.48 | - | ||
| Tantalum oxide | Ta2O5 | 99.95 | 7.53 | 1880 | Hot-pressed | Dielectric film. Multilayers. |
| Thorium oxide | ThO2 | 99.99 | 9.86 | 2100 | Hot-pressed | RADIOACTIVE. Highly durable beam splitter. |
| Tin oxide | SnO2 | 99.9 | 6.85 | 1930 | Hot-pressed | Transparent conductive film. Also in varistors. |
| Titanium oxide | TiO2 | 99.995 99.9 |
4.24 | 1855 | Hot-pressed | High index film, multilayer interference filters. |
| Tungsten oxide | WO3 | 99.99 | 7.16 | 1473 | Hot-pressed | Shadow casting for electron microscopy. |
| Yttrium
aluminum oxide (YAG) |
Y3Al5O12 | 99.9 | 4.55 | 1950 | Hot-pressed | Bubble memory devices. |
| Yttrium
iron oxide (garnet) |
Y3Fe5O12 | 99.99 99.9 |
5.10 | 1575 | Hot-pressed | Ferromagnetic films. Bubble memory devices. |
| Yttrium oxide | Y2O3 | 99.999 99.99, 99.9 |
4.84 | 2400 | Hot-pressed | Hard film. Dielectric coating. Thin film capacitor. |
| Zinc oxide | ZnO | 99.999 99.9 |
5.66 | 1975 | Hot-pressed | Dielectric, in varistors, in gas sensors. |
| Zirconium
oxide (unstabilized) |
ZrO2 | 99.7 | 5.56 | 2687 | Hot-pressed | Multilayers. Dielectric coating. Adherent coating with high refractive index. |
| Zirconium
oxide (stabilized) |
ZrO25-15 wt. % CaO |
99.0 | varies | varies | ||
| ZrO210-15 wt. % Y2O3 |