Material | Formula | Standard
Purities, % |
Theoretical
Density, g/㎤ |
Melting
Point, ℃ |
Fabrication Method* | Applications |
Aluminum-copper | Al-xCu | 99.999 99.99 |
2.70 | 660 | 1 | Conductor contacts in microcircuits. |
Aluminum-silicon | Al-xSi | |||||
Aluminum-silicon copper |
Al-xSi-yCu | |||||
Chromium-silicon monoxide |
70wt.% Cr-30wt. %SiO | 99.9 | 4.20 | - | 2 | Excellent thin film resistors for integrated circuits. |
60wt.%Cr - 40 wt.% SiO | 3.69 | - | ||||
50wt.%Cr - 50wt.% SiO | 3.29 | - | ||||
x wt.% Cr - y wt.% SiO | varies | varies | ||||
Cobalt-iron | xCo - yFe | 99.99 | varies | varies | 1 & 2 | Magnetic films. |
Cobalt-nickle | xCo - yNi | 8.90 | 1475 | |||
Gallium arsenide | GaAs | 99.999 | 5.3 | 1240 | 2 | Semiconductors. |
Gallium phosphide | GaP | 4.14 | 1480 | |||
Inconel | 78 wt.% Ni - 15 wt.% Cr - 7wt.% Fe | 99.999 | 8.51 | 1425 | 1 | Good corrosion resistance. Thin film resistance. Good film adherence. |
Indium antimonide | InSb | 99.999 | 5.8 | 523 | 2 | Semiconductors.Masers. Coherent emission from diffused diodes. Semiconductors.Oxidize to give transparent, conductive films. |
Indium arsenide | InAs | 5.66 | 943 | |||
Indium phosphide | InP | 4.79 | 1058
at 21 atm |
|||
Indium-tin | xIn - ySn | 99.999 99.99 |
7.3 | varies | 1 | |
Manganese-iron | xMn - yFe | 99.99 | varies | varies | 2 | Magnetic films. |
Manganese-nickel | xMn - yNi | |||||
Nickel-chromium | x
wt.% Ni - y wt.% Cr |
99.9 | 7.96-8.48 | 1340-1675 | 1 & 2 | Thin film resistors. Good adherence on non-metals. Good corrosion resistance. |
Nickel-iron | 81wt.% Ni - 19wt.% Fe | 99.99 | 8.00 | 1473 | 1 & 2 | Thin films for magnetic heads. Bubble memory devices. |
xNi - yFe | varies | varies | ||||
Nickel-titanium | xNi - yTi | 99.9 | varies | varies | 1 & 2 | A "shape memory" alloy. Used in circuits; vanadium renders nickel non-magnetic. |
Nickel-vanadium | 93wt.% Ni - 7 wt.% V | 99.7 | 8.60 | 1460 | ||
Niobium-titanium | xNb - xTi | 99.99 | varies | varies | 2 | Proprietary electronic uses. |
Niobium-zirconium | xNb - xZr | |||||
Permalloy | 79wt.% Ni - 16.7wt.% Fe - 4wt.% Mo - 0.3wt.%Mn | 99.5 | 8.74 | - | 1 & 2 | Thin films for magnetic heads. Bubble memory devices. |
Terbium-iron | xTv - yFe | 99.9 | varies | varies | 2 | Magneto-optic, sensitive to light changing flux fields. |
Tungsten-titanium | 90wt.% W - 10wt.%Ti | 99.995 (Na<1 ppm) |
14.6 | 1860 | 2 | Diffusion barriers, primarily between Pt silicide contacts and other interconnects. |
99.9 (Na = 300-500 ppm) |
||||||
99.9(Na<10 ppm) | ||||||
Vanadium-aluminum | xV-yAl | 99.7 | varies | varies | 2 | Proprietary research uses. |
Zirconium-aluminum |
** Fabrication Methods : (1) Vacuum melted (2) Hot-pressed